weitron hpp://www.weitron.com.tw 1/3 15-feb-2011 npn plastic-encapsulate transistor to-92 2SC1008 weitron le ad(pb)-free p b 1. emitter 2. collector 3. base maximum ratings (t a =25c unless otherwise noted) symbol parameter value units collector-base voltage electrical characteristics (tamb=25c unless otherwise specified) parameter symbol test conditions min units max typ classification of h fe collector current power dissipation junction temperature storage temperature v cbo i cm p cm t j tstg 80 0.7 0.8 -55 to +150 -55 to +150 v a w c c collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage transition frequency dc current gain v (br)cbo v (br)ceo v (br)ebo i cbo i ebo h fe v ce(sat) v be(sat) f t i c =500ma, i b = 50ma i c =500ma, i b = 50ma v ce =10v,i c =50ma i c = 100a, i e =0 v ce = 2v, i c = 50ma v eb = 5v, i c =0 v cb = 60v, i e =0 i e = 10a, i c =0 i c = 10ma, i b =0 80 60 8 0.1 0.1 400 0.4 1.1 30 40 v v v a a v v mhz g y o r rank range 40-80 200-400 120-240 70-140
weitron hpp://www.weitron.com.tw 2/3 typical characteristics 2SC1008 15-feb-2011
weitron http://www.weitron.com.tw dim a b c d e g h j k l m in 3.30 1.10 0.38 0.36 4.40 3.43 4.30 max to-92 to-92 outline dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 - 4.70 2.64 14.50 1.270typ e c h a b d l j k g 2.44 14.10 2SC1008 15-feb-2011 3/3
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